Evaluation of selective energy contact for hot carrier solar cells based on III-V semiconductors

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2009, Pages 000530-000533

  Yagi, Shuhei ^a   Oshima, Ryuji ^a   Okada, Yoshitaka ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBING LAYERS; BAND EDGE; CURRENT VOLTAGE; CURRENT VOLTAGE CURVE; DOUBLE BARRIERS; EMISSION WAVELENGTH; ENERGY EXCITATION; FABRICATION TECHNIQUE; GAAS; GAAS(001); HOT CARRIER GENERATION; II-IV SEMICONDUCTORS; LIGHT ILLUMINATION; LOWER ENERGIES; MEASURED RESULTS; MONTE CARLO SIMULATION; QUANTUM WELL; RESONANT TUNNELING STRUCTURE; TUNNELING CURRENT; VOLTAGE SHIFT;

COMPUTER SIMULATION; ELECTRIC CONDUCTANCE; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM ARSENIDE; LASER EXCITATION; MONTE CARLO METHODS; QUANTUM WELL LASERS; RESONANT TUNNELING; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; SOLAR CELLS; SOLAR ENERGY; WIND TUNNELS;

HOT ELECTRONS;

EID: 77951595758     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2009.5411629     Document Type: Conference Paper

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