Noise figure of watt-class utralow-confinement semiconductor optical amplifiers

IEEE Journal of Quantum Electronics

Volumn 47, Issue 1, 2011, Pages 66-75

  Loh, William ^a,b   Plant, Jason J ^a   Klamkin, Jonathan ^a   Donnelly, Joseph P ^a   O'Donnell, Frederick J ^a   Ram, Rajeev J ^b   Juodawlkis, Paul W ^a  

^a MIT LINCOLN LABORATORY   (United States)

^b Department of Electrical Engineering and Computer Science   (United States)

Author keywords

Noise; noise measurement; power amplifiers; quantum well devices; semiconductor optical amplifiers

Indexed keywords

1550 NM; ABSORPTION LOSS; CARRIER HEATING; COUPLED OPTICAL WAVEGUIDES; HIGH-POWER; HIGHER-ORDER MODES; INGAASP; NOISE; NOISE MEASUREMENTS; NOISE PERFORMANCE; OPTICAL AMPLIFIER; OPTICAL CONFINEMENT; POPULATION INVERSIONS; QUANTUM WELL DEVICE; SATURATION OUTPUT POWER; SMALL-SIGNAL GAIN;

ACOUSTIC NOISE MEASUREMENT; NOISE FIGURE; OPTICAL SWITCHES; POWER AMPLIFIERS; POWER ELECTRONICS; SEMICONDUCTOR OPTICAL AMPLIFIERS; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTOR DEVICES;

EID: 78650092791     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2010.2085422     Document Type: Article

References (26)

1. K. Morito and S. Tanaka, "Record high saturation power (+22 dBm) and low noise figure (5.7 dB) polarization-insensitive SOA module," IEEE Photon. Technol. Lett., vol. 17, no. 6, pp. 1298-1300, Jun. 2005.
2. W. Xing, Y. Su, L. Xiang, J. Leuthold, and S. Chandrasekhar, "10-Gb/s RZ-DPSK transmitter using a saturated SOA as a power booster and limiting amplifier," IEEE Photon. Technol. Lett., vol. 16, no. 6, pp. 1582-1584, Jun. 2004.
3. T. Akiyama, M. Ekawa, M. Sugawara, H. Sudo, K. Kawaguchi, A. Kuramata, H. Ebe, K. Morito, H. Imai, and Y. Arakawa, "An ultrawide-band (120 nm) semiconductor optical amplifier having an extremely-high penalty-free output power of 23 dBm realized with quantum-dot active layers," in Proc. Opt. Fiber Commun. Conf., vol. 2. Los Angeles, CA, Feb. 2004, pp. 1-3.
4. P. W. Juodawlkis, J. J. Plant, L. J. Missaggia, K. E. Jensen, and F. J. O'Donnell, "Advances in 1.5-μm InGaAsP/InP slab-coupled optical waveguide amplifiers (SCOWAs)," in Proc. IEEE Lasers Electro-Opt. Soc., Lake Buena Vista, FL, Oct. 2007, pp. 309-310.
5. P. W. Juodawlkis, J. J. Plant, W. Loh, L. J. Missaggia, K. E. Jensen, and F. J. O'Donnell, "Packaged 1.5-μm quantum-well SOA with 0.8-W output power and 5.5-dB noise figure," IEEE Photon. Technol. Lett., vol. 21, no. 17, pp. 1208-1210, Sep. 2009.
6. P. W. Juodawlkis, J. J. Plant, R. K. Huang, L. J. Missaggia, and J. P. Donnelly, "High-power 1.5-μm InGaAsP-InP slab-coupled optical waveguide amplifier," IEEE Photon. Technol. Lett., vol. 17, no. 2, pp. 279-281, Feb. 2005.
7. J. P. Donnelly, R. K. Huang, J. N. Walpole, L. J. Missaggia, C. T. Harris, J. J. Plant, R. J. Bailey, D. E. Mull, W. D. Goodhue, and G. W. Turner, "AlGaAs-InGaAs slab-coupled optical waveguide lasers," IEEE J. Quantum Electron., vol. 39, no. 2, pp. 289-298, Feb. 2003.
8. D. M. Baney, P. Gallion, and R. S. Tucker, "Theory and measurement techniques for the noise figure of optical amplifiers," Opt. Fiber Technol., vol. 6, no. 2, pp. 122-154, Apr. 2000.
9. L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits. New York: Wiley, 1995.
10. T. Briant, P. Grangier, R. Tualle-Brouri, A. Bellemain, R. Brenot, and B. Thedrez, "Accurate determination of the noise figure of polarization-dependent optical amplifiers: Theory and experiment," J. Lightw. Technol., vol. 24, no. 3, pp. 1499-1503, Mar. 2006.
11. CIP Technologies, SOA Application Note. (2008) [Online]. Available: http://www.ciphotonics.com/
12. A. Crottini, F. Salleras, P. Moreno, M. A. Dupertuis, B. Deveaud, and R. Brenot, "Noise figure improvement in semiconductor optical amplifiers by holding beam at transparency scheme," IEEE Photon. Technol. Lett., vol. 17, no. 5, pp. 977-979, May 2005.
13. G. E. Obarski and J. D. Splett, "Transfer standard for the spectral density of relative intensity noise of optical fiber sources near 1550 nm," J. Opt. Soc. Am. B, vol. 18, no. 6, pp. 750-761, 2001.
14. M. Movassaghi, M. K. Jackson, V. M. Smith, and W. J. Hallam, "Noise figure of erbium-doped fiber amplifiers in saturated operation," J. Lightw. Technol., vol. 16, no. 5, pp. 812-817, May 1998.
15. Y. Sun, J. W. Sulhoff, A. K. Srivastava, J. L. Zyskind, C. Wolf, T. A. Strasser, J. R. Pedrazzani, J. B. Judkins, R. P. Espindola, A. M. Vengsardar, and J. Zhou, "An 80 nm ultra wide band EDFA with low noise figure and high output power," in Proc. 23rd Eur. Conf. Opt. Commun., vol. 5. Edinburgh, U.K., Sep. 1997, pp. 69-72.
16. G. Keiser, Optical Communications Essentials. New York: McGraw-Hill, 2003.
17. F. Pommereau, R. Brenot, J. Landreau, L. L. Gouezigou, O. L. Gouezigou, O. L. Lelarge, F. Martin, F. Poingt, B. Rousseau, G.-H. Duan, and B. Thedrez, "Realisation of semiconductor optical amplifiers with homogeneous carrier density and low noise factor," in Proc. Int. Conf. Indium Phosphide Relat. Mater., May 2005, pp. 102-105.
18. C. Henry, "Theory of spontaneous emission noise in open resonators and its application to lasers and optical amplifiers," J. Lightw. Technol., vol. 4, no. 3, pp. 288-297, Mar. 1986.
19. C. Henry, R. Logan, F. Merritt, and J. Luongo, "The effect of inter-valence band absorption on the thermal behavior of InGaAsP lasers," IEEE J. Quantum Electron., vol. 19, no. 6, pp. 947-952, Jun. 1983.
20. G. Fuchs, J. Horer, A. Hangleiter, V. Harle, F. Scholz, R. W. Glew, and L. Goldstein, "Intervalence band absorption in strained and unstrained InGaAs multiple quantum well structures," Appl. Phys. Lett., vol. 60, no. 2, pp. 231-233, Jan. 1992.
21. W. S. Ring, A. R. Adams, P. J. A. Thijs, and T. Van Dongen, "Elimination of intervalence band absorption in compressively strained InGaAs/InP 1.5 μm MQW lasers observed by hydrostatic pressure measurements," Electron. Lett., vol. 28, no. 6, pp. 569-570, Mar. 1992.
22. W. S. Ring, "Examination of intervalence band absorption and its reduction by strain in 1.55 μm compressively strained InGaAs/InP laser diodes," Electron. Lett., vol. 30, no. 4, pp. 306-308, Feb. 1994.
23. V. Mikhaelashvili, N. Tessler, R. Nagar, G. Eisenstein, A. G. Dentai, S. Chandrasakhar, and C. H. Joyner, "Temperature dependent loss and overflow effects in quantum well lasers," IEEE Photon. Technol. Lett., vol. 6, no. 11, pp. 1293-1296, Nov. 1994.
24. S. Seki, H. Oohashi, H. Sugiura, T. Hirono, and K. Yokoyama, "Study on the dominant mechanisms for the temperature sensitivity of threshold current in 1.3-μm InP-based strained-layer quantum-well lasers," IEEE J. Quantum Electron., vol. 32, no. 8, pp. 1478-1486, Aug. 1996.
25. J.-N. Fehr, M.-A. Dupertuis, T. P. Hessler, L. Kappei, D. Marti, F. Salleras, M. S. Nomura, B. Deveaud, J.-Y. Emery, and B. Dagens, "Hot phonons and Auger related carrier heating in semiconductor optical amplifiers," IEEE J. Quantum Electron., vol. 38, no. 6, pp. 674-681, Jun. 2002.
26. T. Chin-Yi, T. Chin-Yao, R. M. Spencer, L. Yu-Hwa, and L. F. Eastman, "Nonlinear gain coefficients in semiconductor lasers: Effects of carrier heating," IEEE J. Quantum Electron., vol. 32, no. 2, pp. 201-212, Feb. 1996.