High-dose exposure of silicon in electron beam lithography

Journal of Micro/Nanolithography, MEMS, and MOEMS

Volumn 7, Issue 1, 2008, Pages

  Grigorescu, Anda E ^a   Van Der Krogt, Marco C ^b   Van Der Drift, Emile W J M ^b   Hagen, Cornelis W ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Dry etching; Electron beam lithography; High exposure dose; Proximity effect

Indexed keywords

ELECTRON BEAMS; ELECTRON OPTICS; ELECTRONS; PHOTOELECTRON SPECTROSCOPY; PLASMA ETCHING; REACTIVE ION ETCHING; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

BACKSCATTERED ELECTRONS; DOSE RANGE; ELECTRON DOSE; ELECTRON EXPOSURE; ETCH RATES; GRADUAL TRANSITION; HIGH DOSE; HIGH EXPOSURE DOSE; HIGH EXPOSURES; IRRADIATED AREA; LOW DOSE; NATIVE OXIDES; NEGATIVE TONES; NOISE LIMIT; POSITIVE TONE; PROXIMITY EFFECTS; SILICON SUBSTRATES; STRUCTURAL CHANGE;

ELECTRON BEAM LITHOGRAPHY;

EID: 78650076896     PISSN: 19325150     EISSN: 19325134     Source Type: Journal    
DOI: 10.1117/1.2841716     Document Type: Article

References (4)

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