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Volumn , Issue , 2010, Pages 456-459

Modeling of partial-RESET dynamics in Phase Change Memories

Author keywords

Multilevel storage; Partial RESET programming; Phase Change Memories

Indexed keywords

AMORPHIZATION PROCESS; ANALYTICAL MODEL; CELL ARCHITECTURES; DYNAMICAL PHENOMENA; MEMORY CELL; MULTILEVEL STORAGE; PARTIAL-RESET PROGRAMMING; PHASE CHANGE; PHYSICS-BASED; SINGLE PULSE; THERMAL BEHAVIORS;

EID: 78649940302     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2010.5618176     Document Type: Conference Paper
Times cited : (2)

References (7)
  • 1
    • 70449916638 scopus 로고    scopus 로고
    • Theoretical analysis of the RESET operation in phase-change memories
    • (6pp)
    • S. Braga, A. Cabrini, and G. Torelli, "Theoretical analysis of the RESET operation in phase-change memories, " Semiconductor Science and Technology, vol. 24, no. 11, p. 115008 (6pp), 2009.
    • (2009) Semiconductor Science and Technology , vol.24 , Issue.11 , pp. 115008
    • Braga, S.1    Cabrini, A.2    Torelli, G.3
  • 2
    • 30344471121 scopus 로고    scopus 로고
    • Phase change memories: State-of-the-art, challenges and perspectives
    • papers selected from the 2005 ULIS Conference
    • A. Lacaita, "Phase change memories: State-of-the-art, challenges and perspectives, " Solid-State Electronics, vol. 50, no. 1, pp. 24 - 31, 2006, papers selected from the 2005 ULIS Conference.
    • (2006) Solid-state Electronics , vol.50 , Issue.1 , pp. 24-31
    • Lacaita, A.1
  • 4
    • 0742284414 scopus 로고    scopus 로고
    • Models for phase-change of Ge2Sb2Te5 in optical and electrical memory devices
    • Jan.
    • S. Senkader and C. D. Wright, "Models for phase-change of Ge2Sb2Te5 in optical and electrical memory devices, " Journal of Applied Physics, vol. 95, pp. 504-511, Jan. 2004.
    • (2004) Journal of Applied Physics , vol.95 , pp. 504-511
    • Senkader, S.1    Wright, C.D.2
  • 5
    • 4544229593 scopus 로고    scopus 로고
    • Novel μtrench phase-change memory cell for embedded and stand-alone non-volatile memory applications
    • June
    • F. Pellizzer et al., "Novel μtrench phase-change memory cell for embedded and stand-alone non-volatile memory applications, " Symposium on VLSI Technology. Digest of Technical Papers., pp. 18 - 19, June 2004.
    • (2004) Symposium on VLSI Technology. Digest of Technical Papers , pp. 18-19
    • Pellizzer, F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.