Doping effects on the electric response properties of silicon clusters: A global structure-property investigation of AlSin-1 clusters (n = 3-10)

Chemical Physics Letters

Volumn 500, Issue 1-3, 2010, Pages 59-64

  Karamanis, Panaghiotis ^a   Marchal, Remi ^a   Carbonniére, Philippe ^a   Pouchan, Claude ^a  

^a UNIVERSITÉ DE PAU ET DES PAYS DE L'ADOUR   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CLUSTER DOPING; DOPING AGENT; DOPING EFFECTS; ELECTRIC RESPONSE; EXOHEDRAL; GLOBAL STRUCTURE; HYPERPOLARIZABILITIES; POLARIZABILITIES; SILICON CLUSTERS; STATIC DIPOLE;

DENSITY FUNCTIONAL THEORY; ELECTRIC PROPERTIES;

DOPING (ADDITIVES);

EID: 78649932214     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2010.09.074     Document Type: Article

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