Structures and composition-dependent polarizabilities of open- and closed-shell Gan Asm semiconductor clusters

Physical Review A - Atomic, Molecular, and Optical Physics

Volumn 80, Issue 5, 2009, Pages

  Karamanis, Panaghiotis ^a   Carbonnière, Phillipe ^a   Pouchan, Claude ^a  

^a UNIVERSITÉ DE PAU ET DES PAYS DE L'ADOUR   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC CLUSTERS; AUTOMATIC PROCEDURES; BULK MATERIALS; CLOSED SHELLS; CLUSTER STRUCTURE; COUPLED CLUSTER TECHNIQUES; DIFFERENT STRUCTURE; DIPOLE POLARIZABILITIES; EXPERIMENTAL DATA; GAAS; GALLIUM ARSENIDE; OPEN-SHELL; PATTERN RECOGNITION TECHNIQUES; PERTURBATION THEORY; POLARIZABILITIES; SEMI-EMPIRICAL; SEMICONDUCTOR CLUSTERS; STRUCTURAL INVESTIGATION; SYSTEMATIC INVESTIGATIONS; THEORETICAL VALUES;

ARSENIC; ARSENIC COMPOUNDS; ATOMIC BEAMS; ATOMS; GALLIUM COMPOUNDS; MOLECULAR DYNAMICS; PATTERN RECOGNITION; PERTURBATION TECHNIQUES; SEMICONDUCTING GALLIUM; SHELLS (STRUCTURES); STRUCTURE (COMPOSITION);

GALLIUM ALLOYS;

EID: 70350764839     PISSN: 10502947     EISSN: 10941622     Source Type: Journal    
DOI: 10.1103/PhysRevA.80.053201     Document Type: Article

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96. In this section by taking into account the most recent experimental study reported by Schnell (Ref.) in fact we revisit all three previously reported experimental studies (Refs.) since for those two clusters all the reported experimental attempts delivered more or less similar values.
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