Comparison of bonding of bulk PZT to silicon by intermediate glass layer and by intermediate Au layer

Materials Science Forum

Volumn 663-665, Issue , 2011, Pages 490-493

  Sun, Jian ^a   Li, Yigui ^a   Liu, Jingquan ^a   Yang, Chunsheng ^a   He, Dannong ^b   Dau Van, Thanh ^c   Katsuhiko, Tanaka ^c   Susumu, Sugiyama ^c  

^a Shanghai Jiao Tong University   (China)

^b SHANGHAI JIAO TONG UNIVERSITY   (China)

^c RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

Anodic bonding; Bond strength; Bulk PZT; Eutectic bonding

Indexed keywords

BOND STRENGTH (MATERIALS); CERAMIC MATERIALS; CRYSTALLOGRAPHY; ENERGY CONVERSION; EUTECTICS; GLASS; GOLD DEPOSITS; LEAD ZIRCONATE TITANATE; METALLIC FILMS; MICROSENSORS; OPTOELECTRONIC DEVICES; PIEZOELECTRIC CERAMICS; PIEZOELECTRICITY; SILICON WAFERS; WAFER BONDING;

ANODIC BONDING; BONDING STRENGTH; BULK PZT; EUTECTIC BONDING; EVAPORATION METHOD; INTERMEDIATE LAYERS; SILICON MACHINING; WAFER TECHNOLOGY;

GLASS BONDING;

EID: 78649931497     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.663-665.490     Document Type: Conference Paper

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