Mechanism of the anodic bonding between PZT ceramics and silicon wafer

Materials Chemistry and Physics

Volumn 51, Issue 2, 1997, Pages 174-177

  Sasaki, Gen ^a   Fukunaga, Hideharu ^a   Suga, Tadatomo ^b   Tanaka, Katuhiko ^c  

^a HIROSHIMA UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c MURATA MANUFACTURING CO LTD   (Japan)

Author keywords

Anodic bonding; Interface; Low temperature bonding; Piezoelectric material

Indexed keywords

ALUMINUM; CERAMIC MATERIALS; COATINGS; ELECTRODES; GLASS; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); LEAD COMPOUNDS; OXIDATION; PIEZOELECTRIC MATERIALS; SILICON WAFERS; SODIUM COMPOUNDS;

ANODIC BONDING; LEAD ZIRCONATE TITANATE;

BONDING;

EID: 0031276488     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0254-0584(97)80289-1     Document Type: Article

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