Gettering and annealing of silicon planar surface layer caused by opposite side implantation technique

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 2000, Pages 334-337

  Troitski, V Yu ^a   Gerasimenko, N N ^b   Smirnov, A V ^a  

^a SCIENTIFIC RESEARCH INSTITUTE FOR SYSTEM ANALYSIS   (Russian Federation)

^b NATIONAL RESEARCH UNIVERSITY OF ELECTRONIC TECHNOLOGY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL ACTIVATION; ELECTRICALLY ACTIVE IONS; GETTERING; HIGH DENSITY; HIGH INTENSITY; IMPLANTATION TECHNIQUE; IMPLANTED LAYERS; PLANAR SURFACE; RECRYSTALLIZATIONS; SELF-ANNEALING; SHALLOW JUNCTION; SILICON LAYER; SINGLE CRYSTAL LAYERS;

ANNEALING; CRYSTAL IMPURITIES; SILICON WAFERS; SINGLE CRYSTALS;

ION IMPLANTATION;

EID: 78649816937     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2000.924156     Document Type: Conference Paper

References (8)

1. M. Foad, D.Jennings, "The formation of ultra-shallow junctions by ion implantation and RTA," Solid State Technology, p.43, Vol.41, No. 12, December 1998.
2. A. Atanos, J.-F. Daviet, V. Parihar, "Susceptor-based rapid thermal processing for forming ultra-shallow junctions," Solid State Technology, p., Vol.43, No. 4, May 2000.
3. R.T.Hodgson, J.E.E.Baglin, R.Pal, J.M.Neri, D.A.Hammer, "Ion beam annealing of semiconductors," Applied Physics Letters, 1980, v.37(2), p.187.
4. J.E.Baglin, R.T.Hodgson, W.K.Chu, J.M.Neri, D.A.Hammer, L.J.Chen, "Pulsed proton beam annealing: semiconductors and silicides," Nucl.Instr.Meth.,1981, v.191, pp.169-176.
5. H. Ryssel, I. Ruge, "Ionen implantation", Munchen, B.G. Teubner, Stuttgart 1978.
6. G.D. Watkins, "Radiation Effects in Semiconductors," New-York. Pergamon Press, 1968, pp.67-81.
7. th International Conference "Ion Implantation in semiconductors and other materials", Vilnus, 1983, pp. 193-194.
8. G.F. Cembali, P.G. Merli, F.Zignani, "Self annealing of implanted Silicon. First experimental results," Applied Physics Letters, 1981, v.38, No 10, pp. 808 - 810.