Susceptor-based rapid thermal processing for forming ultra-shallow junctions

Solid State Technology

Volumn 43, Issue 4, 2000, Pages 50-51,-53

  Atanos, Ashur J ^a   Daviet, Jean Francois ^a   Parihar, Vijay ^a  

^a MATTSON THERMAL PRODUCTS GMBH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON COMPOUNDS; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); ELECTRIC RESISTANCE MEASUREMENT; HIGH TEMPERATURE OPERATIONS; ION IMPLANTATION; ISOTOPES; PROBES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; TRANSMISSION ELECTRON MICROSCOPY;

BORON FLUORIDE; EFFECTIVE ENERGY; ELECTRICAL ACTIVATION; FOUR POINT PROBE MEASUREMENT; SHEET RESISTANCE; SPREAD RESISTANCE PROBE; SUSCEPTOR BASED RAPID THERMAL PROCESSING; TEMPERATURE OVERSHOOT; ULTRASHALLOW JUNCTIONS;

RAPID THERMAL ANNEALING;

EID: 0342757817     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (10)

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