Study of carbide-forming element interlayers for diamond nucleation and growth on silicon and WC-Co substrates

Thin Solid Films

Volumn 519, Issue 5, 2010, Pages 1606-1610

  Tang, Y ^a   Li, Y S ^a   Yang, Q ^a   Hirose, A ^a  

^a UNIVERSITY OF SASKATCHEWAN   (Canada)

Author keywords

Carbide forming element; Chemical vapor deposition; Diamond nucleation and growth; Interlayer

Indexed keywords

CARBIDE FORMING ELEMENTS; CHEMICAL VAPOR; CO-SUBSTRATE; COATED SUBSTRATES; DIAMOND NUCLEATION; DIAMOND NUCLEATION AND GROWTH; FINER GRAINS; INTERLAYER; METAL NITRIDES; MICROCRYSTALLINE DIAMOND; NANOCRYSTALLINE DIAMOND THIN FILMS; NUCLEATION DENSITIES;

CHEMICAL ELEMENTS; CHEMICAL VAPOR DEPOSITION; CHROMIUM; COMPOSITE FILMS; NITRIDES; NUCLEATION; SUBSTRATES; THIN FILMS; TITANIUM; TUNGSTEN ALLOYS; TUNGSTEN CARBIDE;

DIAMONDS;

EID: 78649738757     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.07.110     Document Type: Conference Paper

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