Improving channel mobility in graphene-FETs by minimizing surface phonon scattering - A simulation study

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2010, Pages 13-16

  Yu, Xinxin ^a   Kang, Jiahao ^a   Zhang, Jinyu ^a   Tian, Lilin ^a   Yu, Zhiping ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Graphene FET; Mobility; Polymer; Surface phonon scattering

Indexed keywords

ACOUSTIC PHONONS; CHANNEL CARRIER MOBILITY; CHANNEL MOBILITY; CHARGED IMPURITY; COULOMB SCATTERING; EXPERIMENTAL OBSERVATION; GATE CONTROL; GATE STACK STRUCTURE; HIGH-K DIELECTRIC; MOBILITY; OPTICAL PHONON SCATTERING; POLYMER LAYERS; SIMULATION STUDIES; SURFACE PHONON;

DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); GRAPHENE; MESFET DEVICES; PHONON SCATTERING; PHONONS; POLYMERS; SURFACES;

CARRIER MOBILITY;

EID: 78649608640     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2010.5604586     Document Type: Conference Paper

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