Terahertz wire-grid polarizer by nanoimprinting lithography on high resistivity silicon substrate

IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide

Volumn , Issue , 2010, Pages

  Zhang, L ^a,c   Teng, J H ^b   Tanoto, H ^b   Yew, Y ^b   Deng, L Y ^c   Chua, S J ^a,b,c  

^a SINGAPORE MIT ALLIANCE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

GRATING PERIODS; HIGH RESISTIVITY SILICON; HIGH THROUGHPUT; HIGH-RESISTIVITY SILICON SUBSTRATE; LOW COSTS; NANOIMPRINTING LITHOGRAPHY; POLARIZATION CHARACTERISTICS; TERA HERTZ; WIRE GRID POLARIZERS;

OPTICAL INSTRUMENTS; WIRE;

TERAHERTZ WAVES;

EID: 78649359441     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIMW.2010.5612488     Document Type: Conference Paper

References (7)

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5. Itsunari Yamada, et al "Terahertz wire-grid polarizer with micrometer-pitch Al gratings" Optics Letters 34 274 (2009).
6. M. A. Ordal et al., "Optical properties of the metals Al, Co, Cu, Au, Fe, Pb, Ni, Pd, Pt, Ag, Ti, and W in the infrared and far infrared," Appl. Opt. 22, 1099-1119 (1983).
7. Takeshi Nagashima and Masanori Hangyo, "Measurement of complex optical constants of a highly doped Si wafer using terahertz ellipsometry" Applied Physics Letters 79 3917 (2001).