Origin of the metallic to insulating transition of an epitaxial bi(111) film grown on Si(111)

Chinese Physics B

Volumn 19, Issue 8, 2010, Pages

  Pang, Fei ^a   Liang, Xue Jin ^a   Liao, Zhao Liang ^a   Yin, Shu Li ^a   Chen, Dong Min ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

Bismuth film; Interface states; Rashba spin splitting; Semimetal to semiconductor transition

Indexed keywords

BI FILMS; BISMUTH FILM; INTERFACE STATE; METALLIC BEHAVIOUR; QUANTUM SIZE EFFECTS; RASHBA SPIN; SEMI-METALS; SEMICONDUCTOR TRANSITION; SI (1 1 1); THICKNESS DEPENDENCE; TRANSITION TEMPERATURE; TRANSPORT CHARACTERISTICS;

BEHAVIORAL RESEARCH; BISMUTH; SILICON WAFERS; SINGLE CRYSTALS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78649350215     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/19/8/087201     Document Type: Article

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