Electrical properties and structure of p-type amorphous oxide semiconductor xZnO·Rh2O3

Advanced Functional Materials

Volumn 15, Issue 6, 2005, Pages 968-974

  Kamiya, Toshio ^a   Narushima, Satoru ^a   Mizoguchi, Hiroshi ^a   Shimizu, Ken Ichi ^b   Ueda, Kazushige ^a,c   Ohta, Hiromichi ^a,d   Hirano, Masahiro ^a   Hosono, Hideo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b KEIO UNIVERSITY   (Japan)

^c KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

^d NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; ELECTRIC PROPERTIES; ELECTRONIC STRUCTURE; RHODIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

AMORPHOUS NETWORK; AMORPHOUS OXIDES; CONDUCTION BANDS (CB); VALENCE BANDS (VB);

AMORPHOUS MATERIALS;

EID: 20744446762     PISSN: 1616301X     EISSN: None     Source Type: Journal    
DOI: 10.1002/adfm.200400046     Document Type: Article

References (33)

1. S. E. Spear, P. G. LeComber, Solid State Commun. 1975, 17, 1193.
2. D. E. Carlson, C. R. Wronski, Appl. Phys. 1976, 28, 617.
3. A. Shah, P. Torres, R. Tscharner, N. Wyrsch, H. Keppner, Science 1999, 285, 692.
4. D. E. Carlson, C. R. Wronski, Amorphous silicon solar cells, in Amorphous Semiconductors (Ed: M. H. Brodsky), Springer-Verlag, Berlin, Germany 1979, p. 287.
5. M. J. Thompson, J. Vac. Sci. Technol. B 1984, 2, 827.
6. K. Suzuki, Flat Panel Display Using Amorphous and Microcrystalline Semiconductor Devices (Ed: J. Kanicki), Artech House, Norwood, MA 1991, p. 77.
7. a) H. Hosono, N. Kikuchi, N. Ueda, H. Kawazoe, J. Non-Cryst. Solids 1996, 198-200, 165.
8. b) S. Narushima, M. Orita, M. Hirano, H. Hosono, Phys. Rev. B 2002, 66, 035 203.
9. M. Orita, H. Ohta, M. Hirano, H. Hosono, Philos. Mag. B 2001, 81, 501.
10. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, Nature 2004, 432, 488.
11. N. Mott, Conduction in Non-Crystalline Materials, 2nd ed., Clarendon, Oxford, UK 1993, p. 95.
12. D. C. Paine, T. Whitson, D. Janiac, R. Beresford, C. Ow-Yang, B. Lewis, J. Appl. Phys. 1999, 85, 8445.
13. M. Yasukawa, H. Hosono, N. Ueda, H. Kawazoe, Jpn. J. Appl. Phys. 1996, 34, L281.
14. H. Hosono, N. Kikuchi, N. Ueda, H. Kawazoe, K. Shimizu, Appl. Phys. Lett. 1995, 67, 2663.
15. H. Hosono, Y. Yamashita, N. Ueda, H. Kawazoe, K. Shimizu, Appl. Phys. Lett. 1996, 68, 661.
16. J. D. Perkins, J. A. del Cuet, J. L. Alleman, C. Warmsingh, B. M. Keyes, L. M. Gedvilas, P. A. Parilla, B. To, D. W. Readey, D. S. Ginley, Thin Solid Films 2002, 411, 152.
17. H. Kawazoe, M. Yasukawa, H. Hyodo, M. Kurita, H. Yanagi, H. Hosono, Nature 1997, 389, 939.
18. A. Kudo, H. Yanagi, H. Hosono, H. Kawazoe, Appl. Phys. Lett. 1998, 73, 220.
19. H. Mizoguchi, M. Hirano, S. Fujitsu, T. Takeuchi, K. Ueda, H. Hosono, Appl. Phys. Lett. 2002, 80, 1207.
20. S. Narushima, K. Ueda, H. Mizoguchi, H. Ohta, M. Hirano, K. Shimizu, T. Kamiya, H. Hosono, Adv. Mater. 2003, 15, 1409.
21. H. Ohta, M. Hirano, K. Nakahara, H. Maruta, T. Tanabe, M. Kamiya, T. Kamiya, H. Hosono, Appl. Phys. Lett. 2003, 83, 1029.
22. H. Ohta, H. Mizoguchi, M. Hirano, S. Narushima, T. Kamiya, H. Hosono, Appl. Phys. Lett. 2003, 82, 823.
23. J. Tauc, R. Grigorovici, A. Vancu, Phys. Status Solidi 1966, 15, 627.
24. V. I. Fistul, Heavily Doped Semiconductors, translated from Russian by Albin Tybulewicz, Plenum Press, New York 1969, p. 143.
25. J. Frenkel, Phys. Rev. 1938, 54, 647.
26. J. G. Simmons, Phys. Rev. 1967, 155, 657.
27. W. Futako, T. Sugawara, T. Kamiya, I. Shimizu, J. Organomet. Chem. 2000, 611, 525.
28. T. Sugawara, W. Futako, T. Kamiya, I. Shimizu, J. Non-Cryst. Solids 2004, 338-340, 802.
29. C. Godet, J. Non-Cryst. Solids 2002, 299-302, 333.
30. C. Godet, Diamond Relat. Mater. 2003, 12, 159.
31. C. Godet, Philos. Mag. Lett. 2003, 83, 691.
32. B. I. Shklovskii, Sov. Phys. Semicond. 1973, 6, 1964.
33. A. J. Bosman, C. Crevecoeur, Phys. Rev. 1966, 144, 763.