Study of domain walls and their effect on switching property in Pb(Zr, Ti)O3, SrBi2Ta2O9 and Bi 4Ti3O12

Ferroelectrics

Volumn 262, Issue 1, 2001, Pages 37-46

  Ding, Y ^a,b   Liu, J S ^c   Maclaren, I ^b   Wang, Y N ^a   Kuo, K H ^b  

^a NANJING UNIVERSITY   (China)

^b INSTITUTE OF PHYSICS   (China)

^c TSINGHUA UNIVERSITY   (China)

Author keywords

Anti phase boundary; Bi 4Ti3O12; domain wall; Fatigue; Pb(Zr, Ti)O3; SrBi2Ta2O9; Switching; TEM

Indexed keywords

ANTIPHASE BOUNDARIES; BI 4TI3O12; FATIGUE; PB(ZR , TI)O; SRBI2TA2O9; TEM;

FERROELECTRIC MATERIALS; FERROELECTRICITY; LEAD; PEROVSKITE; PHASE BOUNDARIES; STRONTIUM COMPOUNDS; SWITCHING; TANTALUM; TRANSMISSION ELECTRON MICROSCOPY; ZIRCONIUM;

DOMAIN WALLS;

EID: 78649231477     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150190108225123     Document Type: Conference Paper

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