Role of microstructure on surface and subsurface damage of sintered silicon carbide during grinding and polishing

Wear

Volumn 270, Issue 1-2, 2010, Pages 88-94

  Gao, Jianqin ^a,b   Chen, Jian ^a   Liu, Guiling ^a   Yan, Yongjie ^a   Liu, Xuejian ^a   Huang, Zhengren ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

AFM; Electron microscopy; Fracture; Sintered silicon carbide; Surface topography

Indexed keywords

AFM; ATOMIC FORCE MICROSCOPES; ELONGATED GRAINS; EQUIAXED GRAINS; GRAIN DIAMETER; GRINDING AND POLISHING; LATERAL CRACKS; MATERIAL REMOVAL MECHANISMS; POLISHED SURFACES; SIC CERAMICS; SILICON CARBIDE CERAMIC; SINTERED SILICON CARBIDE; SUB-SURFACE DAMAGE; TEM;

ASPECT RATIO; BRITTLE FRACTURE; CERAMIC MATERIALS; GRINDING (COMMINUTION); GRINDING (MACHINING); MICROSTRUCTURE; PLASTIC DEFORMATION; POLISHING; SILICON CARBIDE; SINTERED CARBIDES; SINTERING; SURFACES; TRANSMISSION ELECTRON MICROSCOPY;

SURFACE TOPOGRAPHY;

EID: 78549231876     PISSN: 00431648     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.wear.2010.09.009     Document Type: Article

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