Defects in individual semiconducting single wall carbon nanotubes: Raman spectroscopic and in situ Raman spectroelectrochemical study

Nano Letters

Volumn 10, Issue 11, 2010, Pages 4619-4626

  Kalbac, Martin ^a,d   Hsieh, Ya Ping ^a   Farhat, Hootan ^b   Kavan, Ladislav ^d   Hofmann, Mario ^a   Kong, Jing ^a   Dresselhaus, Mildred S ^a,c  

^a Department of Electrical Engineering and Computer Science   (United States)

^b USA   (United States)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^d J HEYROVSKÝ INSTITUTE OF PHYSICAL CHEMISTRY   (Czech Republic)

Author keywords

defects; Raman spectroscopy; Single wall carbon nanotubes; spectroelectrochemistry

Indexed keywords

BAND INTENSITY; DEFECT-FREE; DEFECTIVE PARTS; DOPING DEPENDENCE; IN-SITU; MAXIMUM INTENSITIES; RAMAN FEATURE; RAMAN RESONANCES; RAMAN SPECTRA; RAMAN SPECTROSCOPIC; SEMI-CONDUCTING NANOTUBES; SINGLE WALL CARBON NANOTUBES; SPECTROELECTROCHEMICAL DATA; SPECTROELECTROCHEMICAL STUDY;

DEFECTS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; RESONANCE; SPECTROELECTROCHEMISTRY;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

CARBON NANOTUBE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; EQUIPMENT; EQUIPMENT DESIGN; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; RAMAN SPECTROMETRY; SEMICONDUCTOR; ULTRASTRUCTURE;

CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOTUBES, CARBON; PARTICLE SIZE; SEMICONDUCTORS; SPECTRUM ANALYSIS, RAMAN;

EID: 78449301935     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl102727f     Document Type: Article

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