Single- and double-resonance Raman G-band processes in carbon nanotubes

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 24, 2004, Pages

  Souza, M ^a   Jorio, A ^a   Fantini, C ^a   Neves, B R A ^a   Pimenta, M A ^a   Saito, R ^b   Ismach, A ^c   Joselevich, E ^c   Brar, V W ^d   Samsonidze, Ge G ^e   Dresselhaus, G ^f   Dresselhaus, M S ^d,e  

^a FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

^b TOHOKU UNIVERSITY   (Japan)

^c WEIZMANN INSTITUTE OF SCIENCE   (Israel)

^d MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^e USA   (United States)

^f MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE; SILICON; SILICON DIOXIDE;

ARTICLE; ATOMIC FORCE MICROSCOPY; LASER; LIGHT ABSORPTION; PHONON; RAMAN SPECTROMETRY; SEMICONDUCTOR; TEMPERATURE;

EID: 42749099903     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.241403     Document Type: Article

References (18)

1. M. S. Dresselhaus and P. C. Eklund, Adv. Phys. 49, 705 (2000), and references therein.
2. M. S. Dresselhaus, G. Dresselhaus, A. Jorio, A. G. Souza Filho, and R. Saito, Carbon 40, 2043 (2002), and references therein.
3. A. Jorio, M. A. Pimenta, A. G. Souza Filho, R. Saito, G. Dresselhaus, and M. S. Dresselhaus, New J. Phys. 5, 139 (2003), and references therein.
4. M. A. Pimenta, A. Marucci, S. Empedocles, M. G. Bawendi, E. B. Harlon, A. M. Rao, P. C. Eklund, R. E. Smalley, G. Dresselhaus, and M. S. Dresselhaus, Phys. Rev. B 58, R16016 (1998).
5. A. Jorio, M. A. Pimenta, A. G. Souza Filho, Ge. G. Samsonidze, A. K. Swan, M. S. Ünlü, B. B. Goldberg, R. Saito, G. Dresselhaus, and M. S. Dresselhaus, Phys. Rev. Lett. 90, 107403 (2003).
6. R. Saito, A. Jorio A. G. Souza Filho, G. Dresselhaus, M. S. Dresselhaus, and M. G. Pimenta, Phys. Rev. Lett. 88, 027401 (2002).
7. J. Maultzsch, S. Reich, and C. Thomsen, Phys. Rev. B 65, 233402 (2002).
8. J. Maultzsch, S. Reich, U. Schlecht, and C. Thomsen, Phys. Rev. Lett. 91, 087402 (2003).
9. P.-H. Tan, L. An, L.-Q. Liu, Z.-X. Guo, R. Czerw, D. L. Carroll, P. M. Ajayan, N. Zhang, and H. L. Guo, Phys. Rev. B 66, 245410 (2002).
10. C. Thomsen, J. Maultzsch, and S. Reich, in Nanomolecular Nanostructure, IAP Conference Proceedings of the XVII International Winter school/ Euroconference on Electronic Properties of Novel Materials, Kirchberg, Tirol, Austria, 2003, edited by H. Kuzmany, J. Fink, M. Mehring, and S. Roth, Vol. 685, p. 225.
11. R. Haggenmueller, H. H. Gommans, A. G. Rinzler, J. E. Fisher, and K. I. Winey, Chem. Phys. Lett. 330, 219 (2000).
12. J. Hwang, H. H. Gommans, A. Ugawa, H. Tashiro, R. Haggenmueller, K. I. Winey, J. E. Fischer, P. B. Tanner, and A. G. Rinzler, Phys. Rev. B 62, R13310 (2000).
13. J. Hafner, C. L. Cheung, T. H. Oosterkamp, and C. M. Lieber, J. Phys. Chem. B 105, 743 (2001).
14. A. Ismach and E. Joselevich (unpublished).
15. A. Jorio, G. Dresselhaus, M. S. Dresselhaus, M. Souza, M. S. S. Dantas, M. A. Pimenta, A. M. Rao, R. Saito, C. Liu, and H. M. Cheng, Phys. Rev. Lett. 85, 2617 (2000).
16. It is important to stress that the symmetry identifications become less clear for higher order defect-induced scattering processes. However, the use of cutting lines and cutting line indices [see, Ge. G. Samsonidze, R. Saito, A. Jorio, M. A. Pimenta, A. G. Souza Filho, F. A. Grüneis, G. Dresselhaus, and M. S. Dresselhaus, J. Nanosci. Nanotechnol. 3, 431 (2003)] simplifies the symmetry identification in the different scattering processes.
17. O. Dubay, G. Kresse, and H. Kuzmany, Phys. Rev. Lett. 88, 235506 (2002).
18. A. G. Souza Filho, A. Jorio, Ge. G. Samsonidze, G. Dresselhaus, M. A. Pimenta, M. S. Dresselhaus, A. K. Swan, M. S. Ünlü, B. B. Goldberg, and R. Saito, Phys. Rev. B 67, 035427(1-7) (2003).