SCOPUS 정보 검색 플랫폼

Surface and Interface Analysis

Volumn 42, Issue 10-11, 2010, Pages 1544-1547

Nanostructure formation onto a tip of field gas ion emitter by field-assisted oxygen etching

(5) Kobayashi, Y a Yasuhiko, S a,b Morikawa, Y a Kajiwara, K a Hata, K a

a MIE UNIVERSITY (Japan)

b SII NANOTECHNOLOGY INC (Japan)

Author keywords

Field gas ion source; Field ion microscopy; Field assisted oxygen etching; Focused ion beam; Helium; Tungsten

Indexed keywords

A-THERMAL; ANGULAR CURRENT DENSITY; AXIAL BEAM; CRYSTAL PLANES; EMITTER SHAPES; EMITTER TIPS; FIELD ION MICROSCOPY; FIELD-ASSISTED OXYGEN ETCHING; FOCUSED ION BEAM TECHNOLOGY; GAS ION SOURCE; GAS PRESSURES; HELIUM GAS; HELIUM ION; ION CURRENTS; ION EMITTER; NANOSTRUCTURE FORMATION; OXYGEN ETCHING; PSEUDOMORPHIC GROWTH; RIDGE LINES; ROTATIONAL SYMMETRIES; SURFACE LAYERS; TUNGSTEN EMITTERS;

BEAM PLASMA INTERACTIONS; CRYSTAL SYMMETRY; ETCHING; FOCUSED ION BEAMS; GASES; HELIUM; ION BOMBARDMENT; ION MICROSCOPES; ION SOURCES; NANOSTRUCTURES; OXYGEN; RADIOACTIVITY; TUNGSTEN;

IONS;

EID: 78449296566 PISSN: 01422421 EISSN: 10969918 Source Type: Journal
DOI: 10.1002/sia.3612 Document Type: Conference Paper

Times cited : (4)

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