Room temperature ferromagnetic pure ZnO

Physica B: Condensed Matter

Volumn 406, Issue 1, 2011, Pages 19-23

  Xu, Qingyu ^a   Wen, Zheng ^b   Xu, Liguo ^c   Gao, Jinlong ^b   Wu, Di ^b   Shen, Kai ^c   Qiu, Teng ^a   Tang, Shaolong ^b   Xu, Mingxiang ^a  

^a SOUTHEAST UNIVERSITY   (China)

^b NANJING UNIVERSITY   (China)

^c NANJING UNIVERSITY OF AERONAUTICS AND ASTRONAUTICS   (China)

Author keywords

Diluted magnetic semiconductor; Ferromagnetism; Oxygen vacancies; ZnO

Indexed keywords

ANOMALOUS HALL EFFECTS; DILUTED MAGNETIC SEMICONDUCTORS; DISCRETE STATE; FERROMAGNETIC CONTRIBUTION; HIGH CONCENTRATION; HIGH VACUUM; INTRINSIC NATURE; OXYGEN PRESSURE; PURE ZNO; ROOM TEMPERATURE; ROOM TEMPERATURE FERROMAGNETISM; SI SUBSTRATES; SPIN-POLARIZED ELECTRONS; SUBSTRATE TEMPERATURE; X-RAY PHOTOELECTRON SPECTROSCOPY SPECTRA; ZNO; ZNO FILMS;

FERROMAGNETIC MATERIALS; FERROMAGNETISM; FILM PREPARATION; HALL EFFECT; MAGNETIC FIELD EFFECTS; MAGNETIC SEMICONDUCTORS; METALLIC FILMS; OXYGEN; PULSED LASER DEPOSITION; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

OXYGEN VACANCIES;

EID: 78349313433     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2010.09.045     Document Type: Article

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