SCOPUS 정보 검색 플랫폼

Journal of Superconductivity and Novel Magnetism

Volumn 23, Issue 1, 2010, Pages 103-105

Annealing effect in GaDyN on optical and magnetic properties

(5) Zhou, Yi Kai a Takahashi, Masahiro a Emura, Shuichi a Hasegawa, Shigehiko a Asahi, Hajime a

a OSAKA UNIVERSITY (Japan)

Author keywords

Defects; Ferromagnetism; GaDyN; GaN based diluted magnetic semiconductor; Molecular beam epitaxy; Photoluminescence

Indexed keywords

ANNEALING EFFECTS; ANNEALING TEMPERATURES; ANNEALING TREATMENTS; CARRIER INDUCED FERROMAGNETISM; DILUTED MAGNETIC SEMICONDUCTORS; GAN-BASED DILUTED MAGNETIC SEMICONDUCTOR; GREEN BAND; MOLECULAR BEAM EPITAXY PHOTOLUMINESCENCE; NUMBER OF ELECTRONS; ORBITAL TRANSITION; PL INTENSITY;

ANNEALING; CRYSTAL GROWTH; DEFECTS; GALLIUM ALLOYS; GALLIUM NITRIDE; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; METAL ANALYSIS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WIRES;

FERROMAGNETISM;

EID: 73349131703 PISSN: 15571939 EISSN: 15571947 Source Type: Journal
DOI: 10.1007/s10948-009-0578-2 Document Type: Conference Paper

Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.