Dielectric relaxation and magnetic properties of Cr doped GaFeO3

Journal of Physics D: Applied Physics

Volumn 43, Issue 45, 2010, Pages

  Mohamed, M Bakr ^a   Wang, H ^a   Fuess, H ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY PROPERTY; CR CONCENTRATION; CR CONTENT; CR-DOPED; DIELECTRIC CONSTANTS; DIELECTRIC LOSS TANGENT; EQUIVALENT CIRCUIT MODEL; MAGNETIC INTERACTIONS; MAGNETIC TRANSITION TEMPERATURE; ORTHORHOMBIC SPACE GROUPS; POLYCRYSTALLINE; SATURATED MAGNETIZATION; UNIT-CELL VOLUME;

ACTIVATION ENERGY; DIELECTRIC LOSSES; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; MAGNETIC PROPERTIES; SOLID STATE REACTIONS;

CHROMIUM;

EID: 78249278529     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/45/455409     Document Type: Article

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