Structural and magnetoelectric properties of Ga2-xFe xO3 single crystals grown by a floating-zone method

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 6, 2004, Pages

  Arima, T ^a,b,f   Higashiyama, D ^c   Kaneko, Y ^a   He, J P ^a   Goto, T ^c   Miyasaka, S ^c   Kimura, T ^c,g   Oikawa, K ^d   Kamiyama, T ^d   Kumai, R ^e   Tokura, Y ^a,c,e  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d INSTITUTE OF MATERIALS STRUCTURE SCIENCE   (Japan)

^e NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^f TOHOKU UNIVERSITY   (Japan)

^g LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; IRON DERIVATIVE;

ARTICLE; CRYSTAL; CRYSTALLIZATION; MAGNETIC FIELD; MAGNETISM; MEASUREMENT; NEUTRON DIFFRACTION; PHASE TRANSITION; PIEZOELECTRICITY; POLARIZATION;

EID: 20844439710     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.064426     Document Type: Article

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