Solution-processed ZnO nanocrystals in thin-film light-emitting diodes for printed electronics

Journal of Applied Physics

Volumn 108, Issue 8, 2010, Pages

  Toyama, Toshihiko ^a   Takeuchi, Hisazumi ^a   Yamaguchi, Daisaku ^a   Kawasaki, Hayato ^a   Itatani, Kazuki ^a   Okamoto, Hiroaki ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL SIZE; CURRENT MECHANISMS; ELECTRO-LUMINESCENT; EMISSION LAYERS; EXCITON EMISSION; GROWTH TIME; HOLE TRANSPORT LAYERS; PEAK ENERGY; PENTACENES; PHOTOLUMINESCENCE PROPERTIES; PRINTED ELECTRONICS; QUANTUM SIZE EFFECTS; SCANNING ELECTRON MICROSCOPE; SOLUTION-PROCESSED; SPECTRAL MEASUREMENT; THIN-FILM LIGHT-EMITTING DIODES; TIME EVOLUTIONS; ULTRAVIOLET REGION; UV EMISSIONS; WAGNER THEORY; X-RAY DIFFRACTION STUDIES; ZNO; ZNO NANOCRYSTAL; ZNO SURFACE;

CURRENT VOLTAGE CHARACTERISTICS; LIGHT EMISSION; NANOCRYSTALS; PASSIVATION; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 78149442651     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3493157     Document Type: Article

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