Atomically defined rare-earth scandate crystal surfaces

Advanced Functional Materials

Volumn 20, Issue 20, 2010, Pages 3490-3496

  Kleibeuker, Josée E ^a   Koster, Gertjan ^a   Siemons, Wolter ^b   Dubbink, David ^a   Kuiper, Bouwe ^a   Blok, Jeroen L ^a   Yang, Chan Ho ^b,c   Ravichandran, Jayakanth ^b   Ramesh, Ramamoorthy ^b   Ten Elshof, Johan E ^a   Blank, Dave H A ^a   Rijnders, Guus ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

oxides; perovskites; scandates; single termination; surface treatment; thin films

Indexed keywords

BASIC SOLUTIONS; CHEMICAL SENSITIVITY; COMPLEX OXIDES; CRYSTAL SURFACES; LATTICE PARAMETERS; PEROVSKITE TYPE OXIDES; PSEUDOCUBIC; SCANDATES; SELECTIVE WET ETCHING; SINGLE TERMINATION; SPECTROSCOPY MEASUREMENTS; SUBSTRATE SURFACE; TIME OF FLIGHT; TIME-OF-FLIGHT MASS SPECTROSCOPY;

EPITAXIAL GROWTH; MASS SPECTROMETRY; MORPHOLOGY; PEROVSKITE; SURFACE TREATMENT; THIN FILMS; WET ETCHING;

FILM GROWTH;

EID: 78149421250     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201000889     Document Type: Article

References (28)

1. J. G. Bednorz, K. A. Muller, Z. Phys. B 1986, 64, 189.
2. J.-H. Park, E. Vescovo, H.-J. Kim, C. Kwon, R. Ramesh, T. Venkatesan, Nature 1998, 392, 794.
3. W. J. Merz, Phys. Rev. 1949, 76, 1221.
4. G. Rijnders, D. H. A. Blank, Nature 2005, 433, 369.
5. A. Ohtomo, H. Y. Hwang, Nature 2004, 427, 423.
6. H. N. Lee, H. M. Christen, M. F. Chisholm, C. M. Rouleau, D. H. Lowndes, Nature 2005, 433, 395.
7. K. Ueda, H. Tabata, T. Kawai, Science 1998, 280, 1064.
8. D. P. Norton, B. C. Chakoumakos, J. D. Budai, D. H. Lowndes, B. C. Sales, J. R. Thompson, D. K. Christen, Science 1994, 265, 2074.
9. M. Kawasaki, K. Takahashi, T. Maeda, R. Tsuchiya, M. Shinohara, O. Ishiyama, T. Yonezawa, M. Yoshimoto, H. Koinuma, Science 1994, 266, 1540.
10. G. Koster, B. L. Kropman, G. J. H. M. Rijnders, D. H. A. Blank, H. Rogalla, Appl. Phys. Lett. 1998, 73, 2920.
11. J. Chang, Y.-S. Park, S.-K. Kim, Appl. Phys. Lett. 2008, 92, 152910.
12. J. H. Ngai, T. C. Schwendemann, A. E. Walker, Y. Segal, F. J. Walker, E. I. Altman, C. H. Ahn, Adv. Mater. 2010, 22, 2945
13. K. J. Choi, M. Biegalski, Y. L. Li, A. Sharan, J. Schubert, R. Uecker, P. Reiche, Y. B. Chen, X. Q. Pan, V. Gopalan, L.-Q. Chen, D. G. Schlom, C. B. Eom, Science 2004, 306, 1005.
14. J. H. Haeni, P. Irvin, W. Chang, R. Uecker, P. Reiche, Y. L. Li, S. Choudhury, W. Tian, M. E. Hawley, B. Craigo, A. K. Tagantsev, X. Q. Pan, S. K. Streiffer, L. Q. Chen, S. W. Kirchoefer, J. Levy, D. G. Schlom, Nature 2004, 430, 758.
15. C. Adamo, X. Ke, H. Q. Wang, H. L. Xin, T. Heeg, M. E. Hawley, W. Zander, J. Schubert, P. Schiffer, D. A. Muller, L. Maritato, D. G. Schlom, Appl. Phys. Lett. 2009, 95, 112504.
16. R. Uecker, B. Velickov, D. Klimm, R. Bertram, M. Bernhagen, M. Rabe, M. Albrecht, R. Fornari, D. G. Schlom, J. Cryst. Growth 2008, 310, 2649.
17. S. Karimoto, M. Naito, Appl. Phys. Lett. 2004, 84, 2136.
18. S. Venkatesan, B. J. Kooi, J. T. M. De Hosson, A. H. G. Vlooswijk, B. Noheda, J. Appl. Phys. 2007, 102, 104105.
19. D. R. Lide, in CRC Handbook of Chemistry and Physics, CRC Press/Taylor and Francis, Boca Raton, FL 2008.
20. L. Pauling, in The Nature of the Chemical Bond, Cornell University Press, Ithaca, NY 1960.
21. Note that longer annealing may influence the minimum required etching time.
22. J. Wayne Rabalais, in Principles and Applications of Ion Scattering Spectrometry, John Wiley & Sons, Inc., Hoboken, NJ 2003.
23. G. Rijnders, D. H. A. Blank, J. Choi, C. B. Eom, Appl. Phys. Lett. 2004, 84, 505.
24. R. Bachelet, F. Sanchez, J. Santiso, C. Munuera, C. Ocal, J. Fontcuberta, Chem. Mater. 2009, 21, 2494.
25. W. Siemons, Ph.D. Thesis, University of Twente, The Netherlands 2008.
26. J. Choi, C. B. Eom, G. Rijnders, H. Rogalla, D. H. A. Blank, Appl. Phys. Lett. 2001, 79, 1447.
27. W. Hong, H. N. Lee, M. Yoon, H. M. Christen, D. H. Lowndes, Z. Suo, Z. Zhang, Phys. Rev. Lett. 2005, 95, 095501.
28. T. Ohnishi, K. Shibuya, M. Lippmaa, D. Kobayashi, H. Kumigashira, M. Oshima, H. Koinuma, Appl. Phys. Lett. 2004, 85, 272.