Temperature- and Bias-dependent study of photocurrent spectroscopy in an InGaN light-emitting diode operating near 400 nm

Journal of the Korean Physical Society

Volumn 57, Issue 4, 2010, Pages 793-796

  Kim, C S ^a   Kim, J H ^a   Yee, K J ^a,a   Kwon, H K ^b   Lee, H S ^c   Park, J S ^c  

^a Chungnam National University   (South Korea)

^b LG Innotek Co Ltd   (South Korea)

^c Epivalley   (South Korea)

Author keywords

Carrier localization; InGaN; Photocurrent spectroscopy

Indexed keywords

EID: 78149388018     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.57.793     Document Type: Article

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