Preparation of Cu(In,Ga)(S,Se)2 thin films by sequential evaporation and annealing in sulfur atmosphere

Solar Energy Materials and Solar Cells

Volumn 95, Issue 1, 2011, Pages 274-276

  Yamaguchi, Toshiyuki ^a   Asai, Yasutaka ^a   Oku, Naoyuki ^a   Niiyama, Shigetoshi ^b   Imanishi, Toshito ^b   Nakamura, Shigeyuki ^c  

^a WAKAYAMA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b INDUSTRIAL TECHNOLOGY CENTER OF WAKAYAMA PREFECTURE   (Japan)

^c TSUYAMA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

Cu(In,Ga)(S,Se)2 thin film; H2S; Sequential evaporation; Solar cell; Ternary compound

Indexed keywords

ANNEALING TEMPERATURES; AR COATINGS; CU(IN ,GA)(S ,SE)2; CU(IN,GA)(S,SE)2 THIN FILM; EPMA; GA CONTENT; GAS ATMOSPHERE; H2S; MOLE RATIO; SEM; SEQUENTIAL EVAPORATION; SULFUR ATMOSPHERE; TERNARY COMPOUNDS; XRD;

AMORPHOUS FILMS; ANNEALING; COPPER; COPPER COMPOUNDS; EVAPORATION; GALLIUM; OPEN CIRCUIT VOLTAGE; SEMICONDUCTING SELENIUM COMPOUNDS; SOLAR CELLS; SULFUR; TERNARY ALLOYS; TERNARY SYSTEMS; THIN FILMS; VAPOR DEPOSITION;

FILM PREPARATION;

EID: 78149360557     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.05.011     Document Type: Conference Paper

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