Electrochemical preparation and characterization of three-dimensional nanostructured Sn2S3 semiconductor films with nanorod network

Materials Letters

Volumn 65, Issue 2, 2011, Pages 400-402

  Chen, Bin ^a   Xu, Xinhua ^a   Wang, Feng ^a   Liu, Jingjun ^a   Ji, Jing ^a  

^a BEIJING UNIVERSITY OF CHEMICAL TECHNOLOGY   (China)

Author keywords

Semiconductors; Thin films

Indexed keywords

ANNEALING; ENERGY GAP; ITO GLASS; NANORODS; SEMICONDUCTOR MATERIALS; SUBSTRATES; THIN FILMS; TIN;

COATED GLASS SUBSTRATES; ELECTROCHEMICAL PREPARATION; GRANULAR STRUCTURESS; NETWORK STRUCTURES; POTENTIOSTATIC ELECTRODEPOSITION; SEMICONDUCTOR FILMS; STABILIZING AGENTS; THREEDIMENSIONAL (3-D);

FILM PREPARATION;

EID: 78149333175     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2010.10.008     Document Type: Article

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