High-frequency lamb wave device composed of MEMS structure using LiNbO 3 thin film and air gap

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

Volumn 57, Issue 11, 2010, Pages 2564-2571

  Kadota, Michio ^a   Ogami, Takashi ^a   Yamamoto, Kansho ^a   Tochishita, Hikari ^a   Negoro, Yasuhiro ^a  

^a MURATA MANUFACTURING CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC VELOCITY; AIR-GAPS; ANTIRESONANT; CHEMICAL VAPOR; HIGH FREQUENCY; HIGH FREQUENCY DEVICES; HIGH FREQUENCY HF; HIGH VELOCITY; INTERDIGITAL TRANSDUCER; LAMB WAVE; LAMB WAVE DEVICES; LAMB WAVE RESONATORS; MEMS-STRUCTURE; MICROELECTROMECHANICAL SYSTEMS; MOBILE PHONE SYSTEMS; SHEAR HORIZONTALS; SINGLE-CRYSTAL PLATES; SPURIOUS RESPONSE; SUBSTRATE STRUCTURE; SUBSTRATE THICKNESS; WIDE-BAND;

ACOUSTIC IMPEDANCE; ACOUSTIC RESONATORS; ACOUSTIC SURFACE WAVE DEVICES; ACOUSTIC WAVE VELOCITY; DEPOSITION; ELASTIC WAVES; MICROELECTROMECHANICAL DEVICES; PLATES (STRUCTURAL COMPONENTS); RESONATORS; SINGLE CRYSTALS; TELECOMMUNICATION EQUIPMENT; TELEPHONE SYSTEMS; THIN FILMS; TRANSDUCERS; ULTRASONIC TRANSDUCERS; ULTRASONIC WAVES;

CHEMICAL VAPOR DEPOSITION;

EID: 78149239312     PISSN: 08853010     EISSN: None     Source Type: Journal    
DOI: 10.1109/TUFFC.2010.1722     Document Type: Article

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