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Applied Surface Science

Volumn 257, Issue 2, 2010, Pages 381-387

Temperature dependent carrier induced ferromagnetism in Zn(Fe)O and Zn(FeAl)O thin films

(8) Chattopadhyay, S a Nath, T K a,b Behan, A J b Neal, J R b Score, D b Feng, Q b Fox, A M b Gehring, G A b

a INDIAN INSTITUTE OF TECHNOLOGY (India)

b UNIVERSITY OF SHEFFIELD (United Kingdom)

Author keywords

Carrier induced ferromagnetism; Dilute magnetic semiconductor; Insulating type DMS

Indexed keywords

CARRIER CONCENTRATION; DILUTED MAGNETIC SEMICONDUCTORS; ELECTRONIC STRUCTURE; FERROMAGNETIC MATERIALS; FERROMAGNETISM; II-VI SEMICONDUCTORS; MAGNETIC SEMICONDUCTORS; METAL IONS; OXIDE SEMICONDUCTORS; PARAMAGNETISM; TEMPERATURE; THIN FILMS; TRANSITION METALS; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

CARRIER INDUCED FERROMAGNETISM; DILUTE MAGNETIC SEMICONDUCTORS; FERROMAGNETIC ORDERINGS; INSULATING TYPE DMS; PARAMAGNETIC CONTRIBUTION; PARAMAGNETIC MOMENT; SQUID MEASUREMENTS; TEMPERATURE DEPENDENT;

ALUMINUM COMPOUNDS;

EID: 78049527213 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2010.06.085 Document Type: Article

Times cited : (9)

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