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Journal of Luminescence

Volumn 130, Issue 11, 2010, Pages 2118-2122

Interdot carrier transfer in semimagnetic Pb1-xMnxSe nanocrystals embedded in oxide glass

(4) Lourenco S A a,c Silva, R S b Andrade, A A a,c Dantas, N O a,d

a FEDERAL UNIVERSITY OF UBERLÂNDIA (Brazil)

b Federal University of the Tringulo Mineiro (Brazil)

c Grupo de Propriedades Opticas e Termicas de Materiais (GPOTM) (Brazil)

d Laboratrio de Novos Materiais Isolantes e Semicondutores ^* (Brazil)

Author keywords

Activation energy; Carrier transfer interdots; Photoluminescence spectra; Semimagnetic Pb1 xMnxSe nanocrystals

Indexed keywords

CARRIER TRANSFER; DIFFERENT SIZES; GAUSSIAN COMPONENTS; GLASS MATRICES; INTENSITY-DEPENDENT; INTERDOTS; LOW TEMPERATURES; NON-RADIATIVE CHANNELS; OXIDE GLASS; PEAK ENERGY; PHOTOLUMINESCENCE EMISSION; PHOTOLUMINESCENCE SPECTRA; PHOTOLUMINESCENCE SPECTRUM; PL INTENSITY; SEMIMAGNETIC PB1-XMNXSE NANOCRYSTALS; SPECTRAL DECONVOLUTION; TEMPERATURE DEPENDENCE; TEMPERATURE-INDUCED; THERMAL QUENCHING;

ARRHENIUS PLOTS; GLASS; LEAD; MANGANESE; NANOCRYSTALS; PHOTOLUMINESCENCE; SELENIUM COMPOUNDS;

ACTIVATION ENERGY;

EID: 78049450004 PISSN: 00222313 EISSN: None Source Type: Journal
DOI: 10.1016/j.jlumin.2010.06.003 Document Type: Article

Times cited : (13)

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