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Volumn 150, Issue 45-46, 2010, Pages 2243-2247

Electrode size dependent IV characteristics and photovoltaic effect in the oxide pn junctions Pr0.7Ca0.3MnO3Nb : SrTiO3 and La0.7Ca0.3MnO3Nb : SrTiO3

(1) Dho, Joonghoe a

a Kyungpook National University (South Korea)

Author keywords

A. Heterojunctions; A. Thin films; D. Photoconductivity and photovoltaics

Indexed keywords

A. HETEROJUNCTIONS; A. THIN FILMS; AU ELECTRODES; CURRENT VOLTAGE; D. PHOTOCONDUCTIVITY AND PHOTOVOLTAICS; ELECTRODE SIZE; ELECTRON-DOPED; EPITAXIALLY GROWN; HOLE-DOPED MANGANITES; I - V CURVE; IV CHARACTERISTICS; METAL INSULATOR TRANSITION TEMPERATURE; N-TYPE LAYERS; P-N JUNCTION; P-TYPE; PHOTO-CARRIERS; PHOTO-VOLTAGE; RECTIFYING CHARACTERISTICS; RESISTANCE SWITCHING; SCHOTTKY BARRIERS; SRTIO; TEMPERATURE DEPENDENCE; UV LIGHT;

CALCIUM; DISTILLATION; HETEROJUNCTIONS; MANGANESE OXIDE; PHOTOCONDUCTIVITY; PHOTOVOLTAIC EFFECTS; PULSED LASER DEPOSITION; SCHOTTKY BARRIER DIODES; STRONTIUM ALLOYS; THIN FILMS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 78049449607 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/j.ssc.2010.09.033 Document Type: Article

Times cited : (13)

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