Characterization of an ultra high aspect ratio electron beam resist for nano-lithography

Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010

Volumn 2, Issue , 2010, Pages 195-198

  Lewis, S ^a   Jeanmaire, D ^a   Haynes, V ^a   McGovern, P ^b   Piccirillo, L ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b Unit 9 Worsley Mill   (United Kingdom)

Author keywords

Electron beam lithography; Electron beam resist; High aspect ratio; Monte Carlo Simulations; PMMA; SML 2000

Indexed keywords

ELECTRON BEAM RESIST; HIGH ASPECT RATIO; MONTE CARLO SIMULATION; PMMA; SML-2000;

COMPUTER SIMULATION; COSMIC RAY DETECTORS; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; ELECTRON OPTICS; ELECTRONS; FLUIDICS; MONTE CARLO METHODS; NANOTECHNOLOGY;

ASPECT RATIO;

EID: 78049445602     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. D. R. S. Cumming, S. Thomas, J. M. R. Weaver, S. P. Beaumont, '3nm NiCr wires made using electron beam lithography and PMMA resist', Micro. Eng., 30, pp. 423 - 425, (1999).
2. A. C. F. Hoole, M. E. Welland, A. N. Broers, Semicond. Sci. Technol, 12 1166-1170 (1997).
3. Polymethylmethacrylate safety data sheet, Sigma- Aldrich, (2008).
4. D.C. Joy, 'Monte Carlo Modeling for Electron Microscopy and Microanalysis', pp. 33, Oxford University Press, (1995).