Volume grain analysis in organic thin film semiconductors

Nanotechnology 2010: Advanced Materials, CNTs, Particles, Films and Composites - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010

Volumn 1, Issue , 2010, Pages 119-121

  Gredig, T ^a   Bergman, D ^a   Gentry, K P ^a  

^a CALIFORNIA STATE UNIVERSITY   (United States)

Author keywords

Atomic force microscopy; Grain size distribution; Grain volume; Morphology; Phthalocyanine; Thin film

Indexed keywords

ANISOTROPIC GROWTH; ATOMIC FORCE; BEST FIT; CHARGE TRANSPORT; GRAIN AREA; GRAIN DISTRIBUTION; GRAIN MORPHOLOGIES; GRAIN SIZE; GRAIN SIZE DISTRIBUTION; GRAIN STRUCTURES; GRAIN VOLUME; IRON PHTHALOCYANINES; LOG-NORMAL DISTRIBUTION; ORGANIC THIN FILMS; ORGANIC THIN-FILM DEVICES; PHTHALOCYANINE; POLYCRYSTALLINE THIN FILM; ROOM TEMPERATURE; SMALL MOLECULES; WATER-SHED ALGORITHM;

ATOMIC FORCE MICROSCOPY; ATOMS; FILM GROWTH; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; METAL ANALYSIS; MORPHOLOGY; NANOTECHNOLOGY; NITROGEN COMPOUNDS; NORMAL DISTRIBUTION; SEMICONDUCTOR GROWTH; SIZE DETERMINATION; SIZE DISTRIBUTION; THIN FILM DEVICES; THIN FILMS; VAPOR DEPOSITION;

GRAIN GROWTH;

EID: 78049443178     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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