Determination of the base-dopant concentration of large-area crystalline silicon solar cells

IEEE Transactions on Electron Devices

Volumn 57, Issue 11, 2010, Pages 2831-2837

  Hinken, David ^a   Milsted, Ashley ^a   Bock, Robert ^a   Fischer, Bernhard ^b   Bothe, Karsten ^a   Schütze, Matthias ^c   Isenberg, Jörg ^d   Schulze, Achim ^c   Wagner, Matthias ^e  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b Pv Tools GmbH   (Germany)

^c Q Cells SE ^*  (Germany)

^d Centrotherm Photovoltaics Technology GmbH   (Germany)

^e SolarWorld Innovations GmbH   (Germany)

Author keywords

Capacitancevoltage characteristics; photovoltaic cells; surface texture

Indexed keywords

C-V CURVE; C-V MEASUREMENT; CAPACITANCE VOLTAGE; CAPACITANCE VOLTAGE CHARACTERISTIC; CRYSTALLINE SILICON SOLAR CELLS; CURRENT OUTPUT; DOPANT CONCENTRATIONS; ENHANCEMENT FACTOR; EXPERIMENTAL SETUP; FAST METHODS; FOUR-POINT PROBE MEASUREMENTS; INDUSTRIAL SOLAR CELLS; JUNCTION AREA; MEASUREMENT EQUIPMENT; MONOCRYSTALLINE SILICON SOLAR CELLS; MULTI-CRYSTALLINE SILICON SOLAR CELLS; SURFACE TEXTURE;

CRYSTALLINE MATERIALS; MEASUREMENTS; PHOTOELECTROCHEMICAL CELLS; PHOTOVOLTAIC CELLS; POLYSILICON; RESEARCH LABORATORIES; SEMICONDUCTOR DOPING; SILICON SOLAR CELLS; SOLAR CELLS; TEXTURES;

UNCERTAINTY ANALYSIS;

EID: 78049272286     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2064777     Document Type: Article

References (13)

1. J. Hilibrand and R. Gold, "Determination of the impurity distribution in junction diodes from capacitance-voltage measurements," RCA Rev., vol. 21, pp. 242-252, Jun. 1960.
2. R. A. Kumar, M. S. Suresh, and J. Nagaraju. (2003, Jul.). Time domain technique to measure solar cell capacitance. Rev. Sci. Instrum. [Online]. 74(7), pp. 3516-3519. Available: http://link.aip.org/link/?RSI/74/3516/1
3. F. Recart and A. Cuevas, "Application of junction capacitance measurements to the characterization of solar cells," IEEE Trans. Electron Devices, vol. 53, no. 3, pp. 442-448, Mar. 2006.
4. R. A. Kumar, M. S. Suresh, and J. Nagaraju, (2001, May). Facility to measure solar cell ac parameters using an impedance spectroscopy technique. Rev. Sci. Instrum. [Online]. 72(8), pp. 3422-3426. Available: http://link.aip.org/ link/?RSI/72/3422/1 (Pubitemid 33606981)
5. N. Arora, J. Hauser, and D. Roulston, "Electron and hole mobilities in silicon as a function of concentration and temperature," IEEE Trans. Electron Devices, vol. ED-29, no. 2, pp. 292-295, Feb. 1982.
6. S. Sze, Semiconductor Devices: Physics and Technology. New York: Wiley, 1985.
7. P. van Halen, "Characterization of junction capacitance parameters for Gaussian/constant doping profiles," in Proc. IEEE Symp. Circuits Syst., May 1989, vol. 2, pp. 852-855.
8. F. Ho, "Simple model for space-charge region capacitance of an exponential-constant p-n junction," Electron. Lett., vol. 26, no. 25, pp. 2063-2065, Dec. 1990.
9. D. Salameh and D. Linton, "Study of the relation between doping profile and diode CV characteristics," IEEE Trans. Microw. Theory Tech., vol. 47, no. 4, pp. 506-509, Apr. 1999.
10. Conversion Between Resistivity and Dopant Density For Boron-Doped, Phosphorus-Doped and Arsenic-Doped Silicon, ASTM Standard F273, 1999.
11. P. Engelhart, A. Teppe, A. Merkle, R. Grischke, R. Meyer, N. Harder, and R. Brendel, "The rise-EWT solar cell - A new approach towards simple high efficiency silicon solar cells," in Proc. 15th Photovoltaic Sci. Eng. Conf., Shanghai, China, 2005, pp. 802-803.
12. C. Sealy, M. Castell, and P. R. Wilshaw, "Mechanism for secondary electron dopant contrast in the SEM," J. Electron Microsc., vol. 49, pp. 311-321, 2000.
13. J. Hylton, A. Burgers, and W. Sinke, "Alkaline etching for reflectance reduction in multicrystalline silicon solar cells," J. Electrochem. Soc., vol. 151, no. 6, pp. G408-G427, May 2004.