Physical mechanism and ultimate improvement of Vfb shifts of SiN based SiON gate dielectrics

AIP Conference Proceedings

Volumn 893, Issue , 2007, Pages 1403-1404

  Kato, K ^a   Matsushita, D ^a   Muraoka, K ^a   Nakasaki, Y ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Gate; Nitrogen; Oxygen; Vfb

Indexed keywords

EID: 77958481561     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2730429     Document Type: Conference Paper

References (6)

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3. Kato, K., Yamasaki, T., and Uda, T., Phys. Rev. B 73, 073302 (2005);
4. Yamasaki, T., Kato, K., and Uda, T., Phys. Rev. letters 91, 146102 (2003).
5. Matsushita, D., Muraoka, K, Nakasaki, Y., Kato, K, Kikuchi, S., Sakuma, K., and Mitani, Y., IEDM Tech. Digest, 847 (2005);
6. Symp. VISI Tech., p172-173 (2004).