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Journal of Applied Physics

Volumn 108, Issue 7, 2010, Pages

Near band edge anisotropic optical transitions in wide band gap semiconductor Cu2ZnSiS4

(7) Levcenco, S a,b Dumcenco, D a,b Huang, Y S a Arushanov, E b Tezlevan, V b Tiong, K K c Du, C H d

a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Taiwan)

b INSTITUTE OF APPLIED PHYSICS (Moldova)

c NATIONAL TAIWAN OCEAN UNIVERSITY (Taiwan)

d TAMKANG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION EDGES; AS-GROWN; BASAL PLANES; CHEMICAL VAPOR TRANSPORT; CRYSTAL-FIELD SPLITTING; DIRECT BAND GAP; EXPERIMENTAL OBSERVATION; INDIRECT BAND GAP; INTERBAND EXCITONIC TRANSITIONS; NEAR BAND EDGE; PIEZOREFLECTANCE; ROOM TEMPERATURE; SURFACE PHOTOVOLTAGE SPECTROSCOPY; WIDE-BAND-GAP SEMICONDUCTOR;

ABSORPTION; ANISOTROPY; ENERGY GAP; POLARIZATION; SINGLE CRYSTALS;

ABSORPTION SPECTROSCOPY;

EID: 77958160515 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3490219 Document Type: Article

Times cited : (22)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.