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Applied Physics Letters

Volumn 97, Issue 15, 2010, Pages

Reduction of low-frequency 1/f noise in Al-AlOx-Al tunnel junctions by thermal annealing

(3) Julin, J K a Koppinen, P J a Maasilta, I J a

a UNIVERSITY OF JYVÄSKYLÄ (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; ANNEALING PROCESS; HIGH VACUUM; LINEAR DEPENDENCE; LOW FREQUENCY; ORDER OF MAGNITUDE; TEMPERATURE DEPENDENCE; THERMAL-ANNEALING; TUNNELING BARRIER; VACUUM CHAMBERS;

ANNEALING; TUNNEL JUNCTIONS; VACUUM;

ALUMINUM;

EID: 77958098175 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3500823 Document Type: Article

Times cited : (18)

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