Inductively coupled plasma reactive ion etching of gallium indium zinc oxide thin films using Cl2/Ar gas mix

Japanese Journal of Applied Physics

Volumn 49, Issue 8 PART 2, 2010, Pages

  Xiao, Yu Bin ^a   Kim, Eun Ho ^a   Kong, Seon Mi ^a   Chung, Chee Won ^a  

^a Inha University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DC BIAS VOLTAGE; DEGREE OF ANISOTROPY; ETCH RATES; ETCHED FILMS; ETCHING PROCESS; GALLIUM INDIUM ZINC OXIDES; GAS MIX; GAS PRESSURES; INDUCTIVELY COUPLED-PLASMA REACTIVE ION ETCHING; REACTIVE ION; RF-POWER;

BIAS VOLTAGE; CHEMICAL COMPOUNDS; DC POWER TRANSMISSION; ELECTROMAGNETIC INDUCTION; INDIUM; INDUCTIVELY COUPLED PLASMA; IONS; OXIDE FILMS; PHOTORESISTS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE;

REACTIVE ION ETCHING;

EID: 77958090945     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.08JB01     Document Type: Article

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