Electrodeposition and optical properties of highly oriented γ-CuI thin films

Electrochimica Acta

Volumn 55, Issue 27, 2010, Pages 8121-8125

  Kang, Honglan ^a   Liu, Run ^a   Chen, Keli ^a   Zheng, Yifan ^b   Xu, Zhude ^a  

^a ZHEJIANG UNIVERSITY   (China)

^b ZHEJIANG UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

CuI; Electrochemical deposition; Oriented growth; Photoluminescence; Surface energy

Indexed keywords

APPLIED POTENTIALS; AQUEOUS SOLUTIONS; BAND GAPS; CRYSTAL AXIS; CRYSTAL PLANES; CUI; CUI THIN FILMS; ELECTROCHEMICAL DEPOSITION; ELECTROCHEMICAL PROCESS; ETHYLENE DIAMINE TETRA-ACETIC ACID; EXCITON BAND; INDIUM DOPED TIN OXIDES; NEAR ROOM TEMPERATURE; ORIENTED GROWTH; PHOTOLUMINESCENCE SPECTRUM; PREFERENTIAL ORIENTATION; ROOM TEMPERATURE; SOLUTION PH; SURFACE ENERGIES; SURFACE ENERGY;

ACIDS; COPPER; CRYSTAL ORIENTATION; DIFFRACTION; ELECTRODEPOSITION; ETHYLENE; EXCITONS; HOLOGRAPHIC INTERFEROMETRY; INTERFACIAL ENERGY; ITO GLASS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; REDUCTION; SOLUTIONS; SURFACE CHEMISTRY; THIN FILMS; TIN; TIN OXIDES; TITANIUM COMPOUNDS; VAPOR DEPOSITION; X RAY DIFFRACTION;

OXIDE FILMS;

EID: 77958089998     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2010.02.072     Document Type: Conference Paper

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