Effects of the Ag content on the geometrical and electrical characteristics of the screen-printed etched gate electrodes of OTFTs using Ag ink

Microelectronic Engineering

Volumn 87, Issue 12, 2010, Pages 2577-2581

  Lee, Mi Young ^a   Lee, Myung Won ^a   Park, Jong Seung ^a   Song, Chung Kun ^a  

^a Dong A University   (South Korea)

Author keywords

Ag content; Gate electrode; OTFTs; Screen printing; Wet etching

Indexed keywords

ELECTRODES; FILM THICKNESS; GATE DIELECTRICS; METAL INSULATOR BOUNDARIES; MIM DEVICES; REFRACTORY METAL COMPOUNDS; SCREEN PRINTING; SURFACE ROUGHNESS; THIN FILM TRANSISTORS; WET ETCHING;

ELECTRICAL CHARACTERISTIC; ELECTRICAL PERFORMANCE; GATE ELECTRODES; METAL INSULATOR METALS; OFF-STATE CURRENT; ORGANIC THIN FILM TRANSISTOR (OTFTS); OTFTS; POLYVINYL PHENOL;

SILVER;

EID: 77958056787     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.07.019     Document Type: Article

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