Polishing behaviors of single crystalline ceria abrasives on silicon dioxide and silicon nitride CMP

Microelectronic Engineering

Volumn 87, Issue 12, 2010, Pages 2633-2637

  Oh, Myoung Hwan ^a   Singh, Rajiv K ^a   Gupta, Sushant ^a   Cho, Seung Beom ^b  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b LG Chemical Ltd   (South Korea)

Author keywords

Abrasive; Ceria; Chemical mechanical polishing (CMP); Removal selectivity

Indexed keywords

ABRASIVES; CERIUM COMPOUNDS; CHEMICAL POLISHING; CRYSTALLINE MATERIALS; MONOCRYSTALLINE SILICON; NITRIDES; OXIDE FILMS; PARTICLE SIZE; POLISHING; SILICA; SILICON NITRIDE; SILICON OXIDES;

ABRASIVE PARTICLES; CHEMICAL MECHANICAL POLISHING(CMP); HYDROTHERMAL REACTION; MORPHOLOGICAL PROPERTIES; PRIMARY PARTICLE SIZE; SILICON NITRIDE CMP; SINGLE-CRYSTALLINE; SURFACE UNIFORMITY;

CHEMICAL MECHANICAL POLISHING;

EID: 77958047968     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.07.040     Document Type: Article

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