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Solid State Communications

Volumn 150, Issue 43-44, 2010, Pages 2158-2161

Ferromagnetism in carbon-doped In2O3 thin films

(7) Ruan, K B a Ho, H W a,b Khan, R A a Ren, P a Song, W D b Huan, A C H a Wang, L a

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b DATA STORAGE INSTITUTE (Singapore)

Author keywords

A. Diluted magnetic semiconductor; B. Room temperature ferromagnetism

Indexed keywords

CARBON CONCENTRATIONS; DEPOSITION TEMPERATURES; DILUTED MAGNETIC SEMICONDUCTORS; FERROMAGNETIC PROPERTIES; FERROMAGNETIC SIGNALS; IN2O3 THIN FILMS; OXYGEN ATMOSPHERE; OXYGEN VACANCY CONCENTRATION; RF-MAGNETRON CO-SPUTTERING; ROOM TEMPERATURE; ROOM TEMPERATURE FERROMAGNETISM; SATURATED MAGNETIZATION; SI (100) SUBSTRATE; THIN FILM SYSTEMS;

CARBON FILMS; FERROMAGNETIC MATERIALS; FERROMAGNETISM; MAGNETIC SEMICONDUCTORS; MAGNETRONS; OXYGEN; THIN FILMS; VACANCIES; VAPOR DEPOSITION;

OXYGEN VACANCIES;

EID: 77958008226 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/j.ssc.2010.09.005 Document Type: Article

Times cited : (19)

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