Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(1 1 1)A

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 42, Issue 10, 2010, Pages 2529-2531

  Fukushima, T ^a   Hijikata, Y ^a   Yaguchi, H ^a   Yoshida, S ^a   Okano, M ^b   Yoshita, M ^b   Akiyama, H ^b   Kuboya, S ^b   Katayama, R ^b   Onabe, K ^b  

^a SAITAMA UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

doping; Isoelectronic trap; Single photon

Indexed keywords

DELTA-DOPED; GAAS; IN-PLANE; ISOELECTRONIC TRAP; NARROW-LINE WIDTH; PL MEASUREMENTS; SINGLE PEAK; SINGLE PHOTONS;

DOPING (ADDITIVES); ENERGY GAP; GALLIUM ARSENIDE; NITROGEN; PARTICLE BEAMS; PHOTOLUMINESCENCE; PHOTONS; QUANTUM CRYPTOGRAPHY; SEMICONDUCTING GALLIUM; SUBSTRATES;

GALLIUM ALLOYS;

EID: 77958003985     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2009.12.011     Document Type: Conference Paper

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