Unveiling the defect levels in SnS thin films for photovoltaic applications using photoluminescence technique

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 8, 2010, Pages 1934-1939

  Sajeesh, T H ^a   Poornima, N ^a   Sudha Kartha, C ^a   Vijayakumar, K P ^a  

^a Department of Physics   (India)

Author keywords

Electronic structure of semiconductors; Impurity levels; Photoluminescence; Photovoltaic devices; Semiconductors

Indexed keywords

BAND GAPS; BOUND EXCITON; CHEMICAL SPRAY PYROLYSIS; DEFECT LEVELS; DONOR-ACCEPTOR PAIR TRANSITIONS; ELECTRONIC STRUCTURE OF SEMICONDUCTORS; EXCITATION POWER; IMPURITY LEVELS; PHOTOVOLTAIC APPLICATIONS; PHOTOVOLTAIC DEVICES; PL EMISSION; PL INTENSITY; SEMICONDUCTORS; SHALLOW DONORS; SNS THIN FILMS; SYSTEMATIC INVESTIGATIONS;

ACTIVATION ENERGY; ARRHENIUS PLOTS; CRACKING (CHEMICAL); ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; PHOTOLUMINESCENCE; PHOTOVOLTAIC EFFECTS; SPRAY PYROLYSIS; THIN FILMS;

DEFECT STRUCTURES;

EID: 77957962841     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200925593     Document Type: Article

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