A 1.0V power supply, 9.5GByte/sec write speed, Single-Cell Self-Boost program scheme for Ferroelectric NAND flash SSD

2010 IEEE International Memory Workshop, IMW 2010

Volumn , Issue , 2010, Pages

  Miyaji, Kousuke ^a   Noda, Shinji ^a   Hatanaka, Teruyoshi ^a   Takahashi, Mitsue ^b   Sakai, Shigeki ^b   Takeuchi, Ken ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENTERPRISE APPLICATIONS; FLOATING GATES; NAND FLASH; NAND FLASH MEMORY; POWER CONSUMPTION; POWER SUPPLY; POWER SUPPLY VOLTAGE; PROGRAM SCHEMES; PROGRAM VOLTAGE; WRITE SPEED;

FLASH MEMORY;

FERROELECTRICITY;

EID: 77957929151     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2010.5488322     Document Type: Conference Paper

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