A source-line programming scheme for low-voltage operation NAND flash memories

IEEE Journal of Solid-State Circuits

Volumn 35, Issue 5, 2000, Pages 672-680

  Takeuchi, Ken ^a,b   Satoh, Shinji ^a   Imamiya, Ken Ichi ^a   Sakui, Koji ^a  

^a IEEE   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

Flash memory; Low voltage operation; Nand flash memory; Source line programming

Indexed keywords

EID: 0034179167     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.841463     Document Type: Article

References (12)

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