e-beam induced EUV photomask repair - A perfect match

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7545, Issue , 2010, Pages

  Waiblinger, M ^a   Kornilov, K ^a   Hofmann, T ^a   Edinger, K ^a  

^a CARL ZEISS SMT AG   (Germany)

Author keywords

Absorber defect; Defect repair; Electron beam repair; Mask repair; MeRiT HR 32; MeRiT MG 45; Multilayer defect; Passivation; Spontaneous etching

Indexed keywords

ABSORBER DEFECT; DEFECT REPAIR; MASK REPAIR; MERIT HR 32; MERIT MG 45; MULTILAYER DEFECT; SPONTANEOUS ETCHING;

DEFECTS; ELECTRON BEAMS; ETCHING; LITHOGRAPHY; MULTILAYERS; PASSIVATION; PHOTOMASKS;

REPAIR;

EID: 77957913481     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.863542     Document Type: Conference Paper

References (6)

1. "International Technology Roadmap for Semiconductors 2009 - Litho edition", http://www.itrs.net/Links/2009ITRS/2009Chapters-2009Tables/2009- Litho.pdf.
2. C. Ehrlich, K. Edinger, V. Boegli, and P. Kuschnerus, "Application data of the electron beam based photomask repair tool Merit MG", Proc. SPIE Vol. 5835, 145 (2005).
3. T. Liang, A. Stivers, M. Penn, D. Bald, and C. Sethi, "Demonstration of damage-free mask repair using electron beam-induced processes", Proc. SPIE Vol. 5446, 291 (2004).
4. A. Garetto, C. Baur, J. Oster, M. Waiblinger, and K. Edinger, "Advanced process capabilities for electron beam based photomask repair in a production environment", Proc. SPIE Vol. 7122, (2008).
5. A. Garetto, J. Oster, M. Waiblinger, and K. Edinger, "Challenging defect repair techniques for maximizing mask repair yield", Proc. SPIE Vol., (2009).
6. T. Liang, G. Zhang, S. Son, R. Chen, S. Lee, M. Leeson, P. Yan, A. Ma, L. He, G.V.F. Ghadiali, B. Olson, X. Liu, C. Ma, E. Lanzendorf, B. Lieberman; "Strategy and Feasibility of Defect-free Mask Fabrication to Enable EUVL", presented on EUV Symposium 2009 (Prag).