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Volumn , Issue , 2010, Pages 689-693

Scaling reliability and modeling of ferroelectric capacitors

Author keywords

Ferroelectric capacitor; FRAM; Reliability; SPICE model

Indexed keywords

CIRCUIT BEHAVIORS; END OF LIVES; EXPERIMENTAL DATA; FERROELECTRIC CAPACITORS; FRAM; MOCVD; PZT; RELIABILITY PROPERTIES; SIGNAL MARGINS; SPICE MODEL; SWITCHING POLARIZATION;

EID: 77957908461     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488748     Document Type: Conference Paper
Times cited : (4)

References (14)
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    • Kim, K.1    Lee, S.Y.2
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    • Reliability properties of low-voltage ferroelectric capacitors and memory arrays
    • J. Rodriguez, et al "Reliability properties of low-voltage ferroelectric capacitors and memory arrays," IEEE Trans. Dev. Mat. Rel., pp. 436-449, 2004.
    • (2004) IEEE Trans. Dev. Mat. Rel. , pp. 436-449
    • Rodriguez, J.1
  • 7
    • 34547564663 scopus 로고
    • Rochelle salts as a dielectric
    • C.B. Sawyer and C.H. Tower, "Rochelle salts as a dielectric," Phys. Rev., vol.35, p. 269, 1930.
    • (1930) Phys. Rev. , vol.35 , pp. 269
    • Sawyer, C.B.1    Tower, C.H.2
  • 8
    • 0036084677 scopus 로고    scopus 로고
    • Empirical model for fatigue of PZT ferroelectric memories
    • J. Rodriguez, et al, "Empirical model for fatigue of PZT ferroelectric memories," Proc. Rel. Phys. Symp., pp. 39-44, 2002.
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    • S.Y. Lee and K. Kim, "Future 1T1C FRAM technologies for highly reliable, high density FRAM," Proc. IEEE IEDM, pp. 547-550, 2002.
    • (2002) Proc. IEEE IEDM , pp. 547-550
    • Lee, S.Y.1    Kim, K.2
  • 11
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    • A new physical model for the relaxation in ferroelectrics
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.